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Memristor based-elements for chaotic circuits

机译:基于忆阻器的混沌电路元件

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摘要

The peculiar features of the memristor, a fundamental passive two-terminal element characterized by nonlinear relationship between charge and flux, promise to revolutionize integrated circuit design in the next few decades. Besides its most popular potential applications, ultra-dense non-volatile memories and brain-simulating systems, much research has been lately devoted to their use in chaotic circuits. Although the physical memristor is inherently-asymmetric, complementary behaviors arise in devices with opposite polarity. In this work we demonstrate that this makes it feasible to devise a number of practical realizations of a monotone-increasing odd-symmetric charge-flux nonlinearity suitable for chaos-based applications through the sole use of physical memristors of the kind recently fabricated at Hewlett-Packard Labs. Confirmation for such claim is obtained through comparison of chaotic behavior of two modified Chua's oscillators, in which the nonlinear diode is replaced in one case with an artificial memristor with symmetric nonlinearity and in the other case with one of the proposed symmetric memristor combinations
机译:忆阻器的独特特性是一种基本的无源两端子元件,其特征是电荷和通量之间呈非线性关系,有望在未来几十年内彻底改变集成电路设计。除了其最流行的潜在应用,超致密的非易失性存储器和大脑模拟系统外,最近很多研究致力于将其用于混沌电路。尽管物理忆阻器固有地不对称,但是在极性相反的设备中会出现互补行为。在这项工作中,我们证明了这是可行的,它可以通过仅使用最近在惠普公司制造的那种物理忆阻器,来设计出一种适合单调递增奇对称电荷通量非线性的实际实现方法,该非线性适合于基于混沌的应用。 Packard Labs。通过比较两个修改后的Chua's振荡器的混沌行为,可以得到这种要求的确认,其中一种情况是将非线性二极管替换为具有对称非线性特性的人工忆阻器,另一种情况是将其中一种建议的对称忆阻器组合替换为非线性二极管

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    Corinto F., Ascoli A.;

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  • 年度 2012
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